1. The hole transport mechanism in P3HT thin film is governed by space charge limited conduction with temperature, carrier density, and field dependent mobility.
2. On incorporation of CdS nanocrystals in P3HT matrix, the mobility is independent to applied field and carrier density and exhibited agreement with the band conduction mechanism. This is attributed to the enhancement in the overlapping of traps potential wells, which results in decrease in activation energies from 52 meV to 18meV.
Ion Beam Interactions
Mesoporous structure at the surface of 100MeV Ag8+ ion irradiated P3HT at three different fluences of 1010ions/cm2 (HA1), 1011ions/cm2 (HA2) and 1012ions/cm2
TEM Analysis : Surface modification of reduced graphene oxide by 100MeV Ag8+ ion beam
Charge Transport Studies
Giant dielectric constant ε′(ω) as a function of temperature at five fixed frequencies for 100 MeV Ag8+ SHI beam irradiated polypyrrole at the three different thicknesses
Giant Dielectric constant in Graphene oxide
High Frequency Domain
Charge transport in polyaniline nano structures
Behaviour of dc conductivity and activation energy with temperature. Switching from Mott’s3D variable range hopping (VRH) to 1D VRH hopping
Variation of dc conductivity of polyaniline-silver nanocomposites
In polyaniline co polypyrrole system
EMI shielding Devices
EMI Shielding properties of Graphene Oxide and Multistep reduced graphene oxide in X Band
***********NOTE: The data shown here is only for the demonstration purpose for the scientific community and is the copyright of the related journals. Details can be seen in the related research papers given in the list of Publications.